A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs

This paper introduces a novel SPICE-compatible compact model for monolithic bidirectional GaN HEMTs, in cluding operation in both bidirectional and diode mode. This ap proach is capable of modeling current-voltage characteristics and accounts for voltage differences between the two gate electrodes. The model’s equations are based on the empirical Angelov model, with various modifications to better accommodate GaN power HEMTs used in power electronics. These extensions include additions to the equations describing transconductance, and incorporating temperature dependence. Static current-voltage measurements of an experimental monolithic bidirectional GaN on-SiC HEMT and a commercially available unidirectional HEMT are used to validate the accuracy of the proposed model over a wide range of operating conditions.