Characterization of negative tone photoresist mr-EBL 6000.5 for i-line stepper and electron beam lithography for the Intra-Level Mix & Match Approach

In this paper the characterization of the mr-EBL 6000.5, which is an epoxy resin based chemically amplified negative tone resist from micro resist technology (Germany, Berlin) for an Intra-Level Mix & Match (ILM&M) approach is presented. The ILM&M approach combined at least two exposure technologies on the same resist layer showing the advantage to resolve patterns of different dimensions with less process steps and short processing time. Since the mr-EBL 6000.5 resist is capable of being sensitive to both electron- and UV-radiation, process parameters for i-line stepper lithography and electron beam lithography (EBL) needs to be investigated to be capable for the ILM&M approach. First, a spin curve and a post exposure bake (PEB) study were applied to find suitable process parameters for both exposure technologies. Furthermore, the minimum feature sizes for both patterning technologies are investigated by using a 500 nm thick resist layer. The impact of small feature sizes near the CD-limit of the used i-line stepper (350 nm) on the resist thickness after the development was investigated in dependence of the PEB. After all parameters were examined, they were combined to be used in the ILM&M.