C-V characterization technique for four-terminal GaN-on-Si HEMTs based on 3-port S-parameter measurements

This paper presents a low complexity measurement technique to characterize state-of-the-art GaN-on-SiHEMTs based on 3-port S-parameter measurements. The proposed measurement technique permits the C-V characterization of the six inter-electrode capacitances (CGS, CGD, CDS, CBS, CBG, CBD) inherent in a 4-terminal GaN-on-Si HEMT up to 1 kV using a single low-budget test fixture. A-state-of-the-art GaN-on-Si power HEMT available in the market is used as DUT to validate the proposed measurement technique. Measurements show a good agreement with data sheet values and transistor model simulations.