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  4. Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
 
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2009
Conference Paper
Title

Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range

Abstract
In this paper, we will present our results on different high-power GaSb- based optically pumped semiconductor disk lasers (OPSDLs) emitting in the 1.9-2.8 µm wavelength range, with the emphasis on the power scaling capability of these long-wavelength laser by using the following different concepts: increasing the pumped area, using multiple gain chips and using in-well pumped structures.
Author(s)
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rösener, B.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hempler, N.
Hopkins, J.-M.
Burns, D.
Moser, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
European Conference on Lasers & Electro-Optics and the 11th European Quantum Electronics Conference, CLEO Europe - EQEC 2009  
Conference
European Conference on Lasers & Electro-Optics (CLEO Europe) 2009  
European Quantum Electronics Conference (EQEC) 2009  
DOI
10.1109/CLEOE-EQEC.2009.5192436
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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