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Metal oxide channel thin-film transistor, a novel sensor type featuring gate voltage selectivity control
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2000
Conference Paper
Title
Metal oxide channel thin-film transistor, a novel sensor type featuring gate voltage selectivity control
Author(s)
Wöllenstein, J.
Fraunhofer-Institut für Physikalische Messtechnik IPM
Scheulin, M.
Jägle, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM
Böttner, H.
Fraunhofer-Institut für Physikalische Messtechnik IPM
Becker, W.J.
Mainwork
8th International Meeting on Chemical Sensors 2000. Abstract book
Conference
International Meeting on Chemical Sensors (IMCS) 2000
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM
