• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Active frequency-tripler MMICs for 300 GHz signal generation
 
  • Details
  • Full
Options
2012
Journal Article
Title

Active frequency-tripler MMICs for 300 GHz signal generation

Abstract
Two frequency-tripler monolithic microwave integrated circuits (MMICs) reaching sub-millimeter-wave output frequencies of 315 GHz are presented. The convenient integration of transistor-based field effect transistor (FET) frequency multipliers into multifunctional MMICs is shown by integration of a single-stage frequency-tripler with a buffer amplifier generating -0.5 dBm of peak output power at 288. Without post-amplification an average output power of -10.1 dBm in the output frequency range from 285 to 315 is measured with 10 dBm of input power. The 3-dB bandwidth is more than 30 GHz and could not be determined exactly due to the measurement setup. Both MMICs are realized in a 50 nm metamorphic high electron mobility transistor (HEMT) transistor technology. A multiple power-meter measurement technique including a waveguide filter is used to measure accurately the second harmonic power content within the output spectrum.
Author(s)
Lewark, U.J.
KIT
Tessmann, Axel  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
International journal of microwave and wireless technologies  
DOI
10.1017/S1759078712000165
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • circuit design and applications

  • modelling

  • simulation and characterizations of devices and circuits

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024