MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m

We report, on (Ga(1-x)In(x)As- GaAs(1-y)Sb(y)) superlattices grown strain-compensated on ( 100) InP:Fe substrates using new organic chemical vapor deposition. Low temperature photoluminescence measurement show a spatially indirect type-II recombination of electrons in the conduction band of the Ga(1-x)In(x)As and holes in the valence band of the GaAs(1-y)Sb(y) layers at 2.20 mu m. Type-II emission was observed up to room-temperature with 300 K emission centered at 2.30 mu m. The valence and conduction band offsets between strain-compensated Ga(0.24)In(0.58)As and GaAs(1-y) Sb(y) (y about 0.27 to 0.3) layers were estimated to 0.21 eV and 0.33 - 0.39 eV, respectively.