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1977
Journal Article
Title
Investigation of the production and technical use of InSb single crystals periodically doped by means of the Peltier effect
Abstract
The production of periodically doped InSb crystals by Peltier effect modulation was studied for the Czochralski process. Some experimental observations, which characterize the modulation of the segregation constant, are discussed qualitatively An examination of the crystals by helicon diagnostics shows no influence on the wave propagation process by the periodic structure. Therefore the change in notation produced by Peltier effect is too small to be used for amplification or generation of microwaves.
Language
German
Keyword(s)
crystal growth from melt
helicons
iii-v semiconductors
indium antimonide
peltier effect
semiconductor doping
semiconductor growth
thermoelectric effects in semiconductors and insulators
insb single crystals
periodically doped insb crystals
peltier effect modulation
czochralski process
segregation constant
helicon diagnostics
wave propagation process
periodic structure
iii-v semiconductor