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  4. GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence
 
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2004
Conference Paper
Title

GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence

Other Title
GaSb-basierende 2.3 µm Diodenlaser mit reduzierter Fernfelddivergenz
Abstract
There is an increasing interest in room-temperature diode lasers emitting in the infrared wavelength region between 2.0 and 2.5 pm for spectroscopic gas-sensing, medical diagnostics and therapy [1]. For all of these applications, fiber-coupled laser systems are desirable, which call for a laser design with low beam divergente and concomitant high output power.
Author(s)
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kaufel, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
LEOS 2004, The 17th Annual Meeting of the IEEE Laser and Electro-Optics Society. Vol.1  
Conference
IEEE Lasers and Electro-Optics Society (Annual Meeting) 2004  
DOI
10.1109/LEOS.2004.1363095
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • diode laser

  • Diodenlaser

  • infrared

  • Infrarot

  • GaInAsSb

  • GaSb

  • far field

  • Fernfeld

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  • Modenprofil

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