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  4. VIS Fabry-Pérot Interferometer with structured (TiO2/PE-SiO2)3 Bragg-reflectors on 5mm large LP-Si3N4 membranes
 
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2019
Conference Paper
Title

VIS Fabry-Pérot Interferometer with structured (TiO2/PE-SiO2)3 Bragg-reflectors on 5mm large LP-Si3N4 membranes

Abstract
Miniaturized spectrometry systems are achievable e.g. by the use of MEMS based tunable Fabry-Perot Interferometers (FPI) as wavelength selective filter elements. Main part of a FPI is the reflector which is usually realized as a stack of alternating dielectric layers with high and low refractive index. To achieve high reflectance layer stacks with larger number of layers and/or layers with a higher refractive index contrast are needed. Both have to be integrated within the manufacturing processes chain which in practice proves to be a difficult process. We present a FPI with a (TiO2/SiO2)(3) reflector stack with a reflectance of 97 % and TiO2 as high refractive index layer for the use in the VIS-range of 555 nm to 585 nm. Main achievements of TiO2 instead of Si3N4 are a higher reflectance and a minimized reflector complexity. Furthermore, we introduce a dry etch process which is compatible and integrated in the manufacturing process chain of the MEMS FPI. Manufacturing of the 7.5 mm x 7.5 mm chip size FPI is done on 6" wafers consisting of a moveable reflector on a 210 nm thin and 5 mm in diameter LP-Si3N4 membrane and a fixed reflector with an aperture of 2 mm in diameter. The measured peak transmittance is between 28 % and 37 % with a FWHM bandwidth between 1.5 nm and 1.8 nm. It could be shown that the FPIs are tunable over the spectral range from 555 nm to 585 nm with a maximum control voltage of 45 V using the 18th interference order.
Author(s)
Helke, Christian
Hiller, Karla  
Seiler, Jan
Werner, Thomas
Meinig, Marco  
Kurth, Steffen  
Otto, Thomas  
Mainwork
MOEMS and Miniaturized Systems XVIII  
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Conference
Conference "MOEMS and Miniaturized Systems" 2019  
Conference "Optoelectronics, Photonic Materials and Devices" 2019  
DOI
10.1117/12.2509170
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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