X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs

This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substrate for X-band frequencies with output power levels well beyond 15 W. A dual-stage design supplies 18 dB of gain at 10 GHz with a pulsed output power of 20 W at V-DS = 40 V. Further, a single-stage MMIC with 6 mm gate width provides a P-1dB of 14.5 W and a maximum output power of 22.4 W, also at 10 GHz.