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  4. V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links
 
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2024
Conference Paper
Title

V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links

Abstract
This paper presents two V-band power amplifiers that are designed and fabricated using Fraunhofer IAF's 0.15-µm gate-length GaN/SiC HEMT technology. Both amplifiers, a unit PA and a balanced PA comprising two of the unit PAs, are four-stage designs that target the upper V-band for wideband inter-satellite links with high output power at low gain compression. When mounted on a test-jig, biased at a de- rated drain voltage and characterized with a CW stimulus, the unit amplifier and balanced amplifier exhibit a linear gain of, respectively, 19.6-21.8 dB and 18.6-21.0 dB, in the band between 57-70 GHz. In the same band, the amplifiers deliver a saturated output power of 31.9-33.4 dBm (1.5-2.2 W) at a PAE of 9.4-14.0% (unit PA) and 33.5-34.9dBm (2.2-3.1 W) at a PAE of 8.6-11.0% (balanced PA). Both amplifiers exhibit good amplitude linearity, with <0.3 dB difference between OP ₂(dB) and P (sat) across the band for the balanced amplifier. To the authors' best knowledge, these results represent the best power-bandwidth performance of published PAs in the V-band.
Author(s)
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raay, Friedbert van  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Krause, Sebastian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Cimbili, Bharath Kumar
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Colzani, Alberto
SIAE Microelectronica
Traversa, Antonio
SIAE Microelectronics
Fonte, Alessandro
SIAE Microelectronica
Mainwork
IEEE/MTT-S International Microwave Symposium, IMS 2024  
Conference
International Microwave Symposium 2024  
DOI
10.1109/IMS40175.2024.10600246
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride

  • HEMTs

  • high-power amplifiers

  • MMICs

  • satellite communications

  • V-band

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