Analysis of GaN HEMTs for broadband high-power amplifier design

In this paper we present the analysis of GaN HEMT power cells for broadband high-power amplifier design. We compare different power cell layouts, different Al contents in the barrier layer, and different fieldplate configurations. With the results of the analysis we can specifically optimize the epitaxial choice, fieldplate configuration, and the layout of the power cell for broadband high-power amplifiers. The main findings include the challenging interdependence of the parameters with the variation of the technology parameters.