1.3 mu m BH-FP laser with integrated monitor photodiode, 45 degrees reflector for bottom side emission employing full on-wafer fabrication

We report on a 1.3 mu m FP-BH laser with monolithically integrated monitor photodiode and 45 degrees reflector for bottom side emission of the laser light. The devices are fabricated by employing a full on-wafer process including the formation of laser facets and the deposition of the high/antireflective coatings. Besides the possibility of on-wafer characterization, this device with its bottom side optical emission opens the way for the fabrication of low-cost optoelectronic modules based on semiconductor SMT-package technique.