English
Deutsch
Log In
Log in with Fraunhofer Smartcard
Password Login
Research Outputs
Fundings & Projects
Researchers
Institutes
Statistics
Fraunhofer-Gesellschaft
Home
Fraunhofer-Gesellschaft
Artikel
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Details
Full
Export
Statistics
Options
Show all metadata (technical view)
1986
Journal Article
Title
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Author(s)
Stolz, W.
Knecht, J.
Ploog, K.
Wagner, J.
Journal
Solid State Communications
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
absorption
emission
Excitonen
GaInAs/AlInAs
quantum wells
