Dependence of lead chalcogenide diode laser radiation on lattice misfit induced stress

Lead chalcogenide diode lasers were fabricated with PbSe as active layer and different confinement layers consisting of PbS, (PbEu)Se and (PbSr)Se. For PbS confinement layers a red shift in the emission frequency was found, for the other confinement layer types a blue shift was observed. These shifts can be explained by lattice misfit induced strain.