Physical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies

The physical properties of metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) deposited HfZrO4 films have been analyzed in detail by atom probe tomography, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, transmission electron microscopy, atomic force microscopy, variable angle spectroscopic ellipsometry as well as temperature dependent grazing incidence X-ray diffraction. In addition we extend our recently presented electrical 32nm device results with MOCVD and ALD deposited HfZrO4 gate dielectrics by further evaluating 32 nm high performance logic devices on silicon on insulator (SOI) substrates with respect to interface trap charge densities Dit and time dependent dielectric breakdown (TDDB) reliability. All investigated parameters revealed a comparable behavior between ALD and MOCVD and therefore MOCVD is demonstrated to be a promising alternative to ALD in high volume manufacturing in this work.