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  4. Impedance characterization of DNA-functionalization layers on AlGaN/GaN high electron mobility transistors
 
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2015
Journal Article
Title

Impedance characterization of DNA-functionalization layers on AlGaN/GaN high electron mobility transistors

Abstract
Characterization and optimization for biosensor implementation with open gate AlGaN/GaN transistors is described. Probe-DNA was immobilized on the gate. As target, complementary DNA at 10-12-10-7mol/L was added. To investigate the impedimetric properties of the sensing area, electrochemical impedance spectroscopy was used. For very low frequencies, the bio-functionalization layer was modeled as a membrane with a charge transfer resistor in series with a Warburg element. This component presents impedance to diffusion of electrolyte ions. Its behavior is intermediate between a capacitor and a resistor (membrane impedance). After probe-target matching, the charge transfer resistance and Warburg impedance were increased (lower flow of electrolyte ions through the membrane). Using this working principle, a dynamic detection of targets is proposed.
Author(s)
Espinosa, N.
Schwarz, S.U.
Cimalla, Volker  
Podolska, A.
Ambacher, Oliver  
Journal
Procedia Engineering  
Conference
European Conference on Solid-State Transducers (Eurosensors) 2015  
Open Access
Link
Link
DOI
10.1016/j.proeng.2015.08.790
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