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  4. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
 
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2023
Journal Article
Title

A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

Abstract
In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination R2 = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.
Author(s)
Mo, Jiarui
Li, Jinglin
Zhang, Yaqian
Romijn, Joost
May, Alexander  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Erlbacher, Tobias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Zhang, Guoqi
Vollebregt, Sten
Journal
IEEE Electron Device Letters  
Open Access
DOI
10.1109/LED.2023.3268334
Additional full text version
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Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • high temperature

  • p-n diode

  • Silicon carbide

  • temperature sensor

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