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Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambient
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1994
Conference Paper
Title
Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambient
Author(s)
Lange, P.
Hartmannsgruber, E.
Naumann, F.
Mainwork
RTP '94. 2nd International Rapid Thermal Processing Conference. Proceedings
Conference
International Rapid Thermal Processing Conference 1994
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT
