Properties of TCO-films prepared by reactive magnetron sputtering

This study is on the development of new, economic transparent and conductive oxide layers by reactive sputtering. Aluminium doped zinc oxide films have been prepared by reactive mid-frequency magnetron sputtering at deposition rate of approximately 9 nm/s and substrate temperature of 100°C to 200°C. Process stabilization in the metallic mode has been performed by the control of plasma impedance due to the adjustment of oxygen flow. Metallic Zn:Al targets with aluminium content in the range of 0.9 to 2.9 wt. % have been used. ZnO:Al films prepared by this technique exhibit low resistivity of 300 µ cm at 200°C substrate temperature and 480 µ cm at 100°C substrate temperature (film thickness of 500 nm).