Characteristics of double-heterojunction InGaAsP/InP bipolar transistors

Double-heterojunction InGaAsP/InP bipolar transistors comprising a double-layer n-InGaAs/N-InP collector structure to overcome a pronounced gain reduction at low collector bias voltages have been characterized in terms of current/voltage and gain properties, including their dependence on temperature. Preliminary results on switching behaviour are given in addition.