Sol-gel preparation of ZrO2-PMMA for thin films transistors

The hybrid metal oxide/polymer thin films are a very promising class of dielectric materials used as a gate for the last generation of field-effect transistors (TTFT). The zirconia nanoparticles are suitable for the formation of discrete inorganic building blocks coualently bonded to the organic polymers in hybrid materials. In this paper, zirconia nanoparticles (ZrO2NPs) and polymthylmetacrylate (PMMA) were used to obtain hybrid thin films. The zirconia nanoparticles were functionalized with MPS agents by using a modified sol-gel route. Poly methyl methacrylate was used as an organic component to obtain flexible and resistant hybrid thin films with thickness in nanometer range by using spin coating techniques. This work presents a second work for the optimization of the homogeneity of thin film layer to obtain layer with better dielectric properties. Thin films with good adherence to silicon substrates and dielectric permitivity between 4.5 and 6 have been obtained. The morphology of thin films were investigated by scanning electron microscopy and the dielectric behavior was evaluated based on I-V and C-V measurements.