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  4. Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology
 
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2020
Presentation
Title

Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology

Title Supplement
Presentation held at 4th International Symposium on SiC Materials and Devices 2020, 26.11.2020, Busan, Republic of Korea
Author(s)
Erlbacher, T.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Conference
International Symposium on SiC Materials and Devices 2020  
File(s)
Download (1.62 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-410032
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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