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  4. Lead chalcogenide mid-infrared diode lasers fabricated by ion-implantation
 
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1998
Journal Article
Title

Lead chalcogenide mid-infrared diode lasers fabricated by ion-implantation

Abstract
Ar+ implanted PbSe mid-infrared (MIR) lasers have been fabricated, characterized and analyzed. For the first time the operation of ion-implanted lead-salt mid-infrared diode lasers in continuos-wave (CW) mode at temperatures above 77 K was achieved. The maximum operating temperatures of 115 K in CW mode and 155 K in pulse mode were reached.These lasers have high output power, low linewidth, and small tuning rate, as well as comparatively low threshold currents. These promis-properties demonstrated that ion-implanted MIR lasers are competitive candidates as tunable sources in the applications of high-resolution spectroscopy and trace-gas analysis.
Author(s)
Xu, J.
Lambrecht, A.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.655359
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • ion implantation

  • lead-salt diode laser

  • mid-infrared diode laser

  • PbSe

  • semiconductor laser

  • tuning rate

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