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  4. Dielectric charging process in A1N RF-MEMS capacitive switches
 
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2007
Conference Paper
Title

Dielectric charging process in A1N RF-MEMS capacitive switches

Abstract
The paper investigates the electrical properties of magnetron sputtered AIN in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.
Author(s)
Papaioannou, G.J.
Lisec, T.
Mainwork
2nd European Microwave Integrated Circuits Conference, EuMIC 2007  
Conference
European Microwave Integrated Circuit Conference (EuMIC) 2007  
DOI
10.1109/EMICC.2007.4412769
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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