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  4. A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology
 
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2005
Journal Article
Title

A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology

Other Title
Ein D-Band Frequenzverdoppler-MMIC auf einer metamorphen HEMT Technologie mit 100nm Gatelänge
Abstract
A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented. For an input power of 4.8 dBm, this doubler demonstrates an output power between 2.6 and - 0.3 dBm over the bandwidth from 105 to 145 GHz, that is, a 3-dB bandwidth of 32% has been achieved. To the knowledge of the authors, this is the first reported multiplier based on MHEMT technology at D-band or higher frequencies.
Author(s)
Campos-Roca, Y.
Schwörer, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE microwave and wireless components letters  
DOI
10.1109/LMWC.2005.851566
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • coplanar waveguide

  • Koplanarleitung

  • CPW

  • frequency multiplier

  • Frequenzvervielfacher

  • metamorphic high electron mobility transistor

  • metamorpher Transistor mit hoher Elektronenbeweglichkeit

  • MHEMT

  • MMIC

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