Large signal HBT model for TECAP

A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describing this model, A New Large Signal Model for Heterojunction Bipolar Transistors Including Temperature Effects was presented at the IEEE 1991 CICC. The model provides a non-linear large signal repesentation of the HBT and is derived from the Gummel-Poon model for silicon bipolar transistors. It treats the parasitic resistances in the base and collector as non-linear elements. It also accounts for the negative ouput conductance characteristic of HBTs operating at high power densities. The small signal behavior of the model is accurate to 18 Ghz.