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  4. Laser annealing of SnO2 thin-film gas sensors in single chip packages
 
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1995
Journal Article
Title

Laser annealing of SnO2 thin-film gas sensors in single chip packages

Abstract
A Nd:YAG laser beam has been used to anneal thin-film SnO2 gas sensors mounted in TO-8 packages. Annealing temperatures up to 1000 °C for a few minutes significantly improved the sensor signal. In particular, signal drifts can be reduced. Furthermore, signal changes become very fast around an operating temperature of 3000 °C. Saturation and recovery times are within seconds for CO and CH4. Ca-implanted sensors show cross sensitivities towards CO2 and NO2.
Author(s)
Steiner, K.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Sulz, G.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Neske, E.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Wagner, E.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Sensors and Actuators. B  
DOI
10.1016/0925-4005(94)01558-Y
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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