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  4. RF-MEMS technology for future mobile and high-frequency applications: Reconfigurable 8-Bit power attenuator tested up to 110 GHz
 
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2016
Journal Article
Title

RF-MEMS technology for future mobile and high-frequency applications: Reconfigurable 8-Bit power attenuator tested up to 110 GHz

Abstract
In this letter, we present and test-to the best of our knowledge, for the first time-, an 8-bit (256-state) reconfigurable RF-MEMS attenuator, from 10 MHz up to 110 GHz, realized in the CMM-FBK technology. Resistive loads, in series and shunt configuration, are selectively inserted on the RF line by means of electrostatic MEMS ohmic switches. The network exhibits several attenuation levels in the range of -10/-45 dB that are rather flat up to 50 GHz, and a certain number of configurations with VSWR smaller than 4 from nearly dc up to 110 GHz, and better than 2 on a frequency span of ~80 GHz.
Author(s)
Iannacci, J.
Huhn, M.
Tschoban, C.
Pötter, H.
Journal
IEEE Electron Device Letters  
DOI
10.1109/LED.2016.2623328
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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