1 MHz resonant DC/DC-converter using 600 V gallium nitride (GaN) power transistors

Gallium Nitride (GaN) is known to provide the opportunity of producing power transistors with remarkable electrical properties, such as low on-state resistance and low switching energies. This paper demonstrates how the use of GaN power transistors along with the possibility of raising the switching frequency can lead to a significant reduction of volume, weight and production costs of a power converter while maintaining high efficiency. A 1 kW resonant LLC converter using 600 V GaN power transistors is presented.