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1995
Journal Article
Title
1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Other Title
1.3 mym monolithisch integrierter optoelektronischer Empfänger auf GaAs mit einer InGaAs-MSM-Photodiode und AlGaAs/GaAs HEMTs
Abstract
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAS HEMTs grown on a GaAs substrate has been fabicated. At each differntial output the transimpedance is 26.8 komega. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.
Author(s)