• English
  • Deutsch
  • Log In
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
 
  • Details
  • Full
Options
1999
Journal Article
Titel

Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate

Alternative
Licht-emittierende Dioden (LED) und Laser-Dioden basierend auf Ga(1-x)In(x)As/GaAs(1-y)Sb(y) Type II Übergittern, abgeschieden auf InP-Substraten
Abstract
We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga(1-x) In(x)As/GaAs(1-y)Sb(y) superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 mu m, the index-guided diode lasers displayed cw laser emission at 1.71 mu m up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED.
Author(s)
Bachem, K.H.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Herres, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Peter, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Wagner, J.
Winkler, K.
Zeitschrift
Applied Physics Letters
Thumbnail Image
DOI
10.1063/1.123738
Language
English
google-scholar
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • laser

  • LED

  • MOCVD

  • MOVPE

  • superlattice

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022