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  4. Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
 
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1999
Journal Article
Title

Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate

Other Title
Licht-emittierende Dioden (LED) und Laser-Dioden basierend auf Ga(1-x)In(x)As/GaAs(1-y)Sb(y) Type II Übergittern, abgeschieden auf InP-Substraten
Abstract
We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga(1-x) In(x)As/GaAs(1-y)Sb(y) superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 mu m, the index-guided diode lasers displayed cw laser emission at 1.71 mu m up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED.
Author(s)
Peter, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Herres, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Winkler, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bachem, K.H.
Wagner, J.
Journal
Applied Physics Letters  
DOI
10.1063/1.123738
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • laser

  • LED

  • MOCVD

  • MOVPE

  • superlattice

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