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2013
Poster
Title
Comparison of carrier lifetime measurements and mapping using time resolved photoluminescence and ยต-PCD
Title Supplement
Poster presented at ICSCRM 2013, International Conference on Silicon Carbide and Related Materials, September 29 - October 4, 2013, Miyazaki, Japan
Abstract
Carrier lifetime measurements and wafer mappings have been done on several different 4H-SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave-detected photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.
Author(s)