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  4. GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500-750 GHz)
 
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2012
Conference Paper
Title

GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500-750 GHz)

Abstract
In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500-750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 m thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only 1.0 dB @ 670 GHz. The measured return losses are better than 10 dB up to 720 GHz. The single transition includes a waveguide section with a length of 7.0 mm corresponding to the transitions which will be used in future submillimeter-wave MMIC modules.
Author(s)
Hurm, V.
Tessmann, Axel  
Massler, Hermann
Leuther, Arnulf  
Riessle, Markus  
Zink, Martin  
Schlechtweg, M.
Ambacher, Oliver  
Mainwork
Asia-Pacific Microwave Conference, APMC 2012. Proceedings  
Conference
Asia-Pacific Microwave Conference (APMC) 2012  
DOI
10.1109/APMC.2012.6421527
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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