Process development for sputtering of p-type TCOs, namely Cu-Al-O mixtures

The formation of p-type Cu-Al-O thin films has been studied and their optical and electrical properties have been examined. The studied coatings have been prepared by employing reactive RF magnetron sputtering. Post deposition annealing at different temperatures between 450°C and 1050°C in argon or nitrogen flows have been carried out. Seebeck measurements and Hall Effect analysis showed the best p-conducting film of this study has a considerable low Seebeck coefficient of 29 µV/K and a carrier mobility of 9.2 cm2/Vs. A good optical transmission of this film was determined by photometric measurements. The structures of the surface of the films and their composition have also been observed.