Temperature behaviour of CMOS devices built on SIMOX substrates

CMOS devices have been built on SIMOX substrates. The device characteristics are examined in the temperature range from room temperature up to 300 C. The degradation of the threshold voltage and the carrier mobility are comparable for bulk- and SOI-devices, but at 300 C the off-state currents of the SOI-devices are three orders of magnitude less than those of bulk counterparts. The capability of SOI-devices for high temperature applications will be shown.