10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

A set of ICs has been developed for the high speed data link at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3 Mym gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as transimpedance amplifier, bit synchronizer and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.