In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

In situ hydrogen radical treatment in a processing chamber attached to a molecular beam epitaxy (MBE) system is successfully applied for the native oxide removal from AlGaInAs surfaces exposed to air prior to MBE regrowth. The influence of cleaning conditions is studied on regrown GaInAs layers and AlGaInAs/GaInAs single quantum well (SQW) structures. At optimum cleaning conditions no deterioration of the quality of the treated material appears. In addition, reduction of the interface carbon concentration is achievable.