Investigation of Stress Generated by Interconnection Processes with Micro-Raman Spectroscopy (μRS)

The stress and strain induced by interconnection processes in Raman active semiconductor materials, e.g. silicon, are investigated using Micro-Raman Spectroscopy (μRS). Sintered interconnects are benchmarked against standard eutectic Au80Sn20 solder used for optoelectronic devices packaging. The Raman signal is measured and analyzed before and after the bonding process. Scanning acoustic microscopy (SAM) and cross-sectioning of the assemblies is performed to correlate the measured measured stress with interconnection quality. Based on the results a finite element (FE) model is evaluated and calibrated for analysis of stress in interconnections.