Reaching a kerf loss below 100 µm by optimizing the relation between wire thickness and abrasive size for multi-wire sawing

Multi-wire sawing is to date by far the most common method to produce wafers from crystallized silicon bricks. A lot of research is undertaken to reduce the kerf to minimize the loss of silicon. In this paper we present experiments in which we achieved a kerf loss of less than 100 ?m. It was possible to cut wafers successfully with a steel wire of 80 ?m thickness and F600 silicon carbide particles. The wafers had industrial quality results for surface and geometry. A problem that occurred was some scratches on the wire exit. With an 80 ?m wire and F2000/F1500 we could not cut wafers of desired quality. As a result of this investigation we conclude that to reduce the kerf it is important to optimize the relation between the wire size and the abrasive size. In general it can be said that for the use of thinner wires also smaller abrasives have to be used to obtain best wafer surfaces.