Investigation of magneto-tunneling processes in InAs/AlSb/GaSb based resonant interband tunneling structures

AlAs monolayers grown adjacent to the AlSb barriers in InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes have recently been proposed in order to improve the peak-to-valley ratio of these devices. We report the effects of high magnetic fields applied parallel and perpendicular to the tunnel current. Clearly-resolved oscillatory behaviour in the I(V) characteristics with the magnetic fiel parallel to the tunneling current can be attributed to resonant tunneling via Landau level states of the hole states in the GaSb well. The magnetotunneling data reveal much better confinement of the hole states in the GaSb well in Tunneling structures with AlAs-hole-barriers as compared to devices with no hole barriers.