Temperature- and injection-dependent lifetime spectroscopy (T-IDLS): Advanced analysis

Lifetime spectroscopy (LS) is a highly sensitive diagnostic tool for the identification of impurities in semiconductors. However, the special technique of temperature- and injection-dependent lifetime spectroscopy (TIDLS) has not yet allowed unambiguous spectroscopic results. To solve this problem, a new data evaluation procedure is introduced, which is based on the determination of the defect-parameter solution surfaces (DPSS) of the individual T-IDLS curves and thus allows to perform the required simultaneous SRH analysis of the whole set of T-IDLS curves with maximum transparency. The application of the advanced DPSS analysis on a set of T-IDLS curves, measured on a molybdenum-contaminated silicon sample in an extended temperature range from 220 to 470 K, allowed for the first time to determine exact defect parameters from T-IDLS data - in good agreement with results from literature - and to estimate the accuracy of the spectroscopic result quantitatively. Moreover, the advanced DPSS analysis provides deeper insight into the spectroscopic potential of T-IDLS and reveals the decisive impact of the investigated temperature range on the quality of the spectroscopic result.