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  4. Demonstration of single crystal GaAs layers on CTE-matched substrates by the Smart Cut technology
 
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2012
Conference Paper
Title

Demonstration of single crystal GaAs layers on CTE-matched substrates by the Smart Cut technology

Abstract
Templates made of a thin single crystal GaAs layer on CTE-matched substrate (sapphire) have been realized using the Smart Cut technology. These templates can withstand high processing temperatures thanks to the CTE matching between the GaAs thin film and its support, and therefore can be used for many applications since they require no specific restriction concerning thermal treatments. The GaAs templates have been compared to conventional bulk GaAs substrates. TEM images and XRD spectra show similar crystalline quality. AFM measurements show a similar surface microroughness. Photoluminescence of a AlGaAs double heterostructure grown by MOCVD on the GaAs template shows the same intensity as a reference structure on bulk GaAs. Therefore, the GaAs templates can replace GaAs bulk substrates in various domains such as photonics devices (solar cell, laser) or high frequency electronics. ©The Electrochemical Society.
Author(s)
Jouanneau, T.
Bogumilowicz, Yann
Gergaud, P.
Delaye, V.
Barnes, J.-P.
Klinger, Vera
Dimroth, Frank  
Tauzin, Aurélie
Ghyselen, Bruno
Carron, Véronique
Mainwork
Graphene, Ge/III-V, nanowires, and emerging materials for post-CMOS applications 4  
Conference
International Symposium on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applictions 2012  
Electrochemical Society (Meeting) 2012  
DOI
10.1149/1.3700466
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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