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  4. Silicon-on-Insulator development in Europe
 
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1991
Journal Article
Title

Silicon-on-Insulator development in Europe

Abstract
Since silicon-on-insulator offers several inherent advantages over other procedures for CMOS circuit operation, SOI has become an important development area. This paper reviews European progress in SOI techniques, including layer isolation by high dose oxygen implantation (SIMOX) for VLSI and smart power, wafer bonding for smart power, and recrystallization for 3D or sensor applications.
Author(s)
Belz, J.
Burbach, G.
Vogt, H.
Zimmer, G.
Journal
Solid state technology  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • material development

  • silicon-on-insulator

  • smart power

  • SOI

  • VLSI on SIMOX

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