Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications

This paper reports on 1.3 mu m complex coupled DFB lasers, 1.55 mu m (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 mu m/1.5 mu m transmitter/receiver ICs are presented.