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  4. D-band and G-band high-performance GaN power amplifier MMICs
 
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2019
Journal Article
Title

D-band and G-band high-performance GaN power amplifier MMICs

Abstract
In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) frequencies. A four-stage cascode PA operates with more than 25 dB of small-signal gain over a 107-148-GHz band. At 120 GHz, it can deliver up to 26.4 dBm of output power and up to 16.5% of power-added efficiency (PAE) with more than 26 dB of gain at saturation. The combination of these parameters is among the best reported with a solid-state technology at such high frequencies. The two G-band circuits are able to provide up to 40 GHz of 3-dB bandwidth and gain exceeding 10 dB up to 190 GHz. The measured peak output power is 15.8 dBm at 181 GHz in 0.6-dB gain compression with a corresponding PAE of 2.4%. To the best of our knowledge, these amplifiers show the highest gain above 170 GHz and the highest output power above 150 GHz among any reported GaN-based MMICs.
Author(s)
Cwiklinski, Maciej
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leone, Stefano  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lozar, Roger  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE transactions on microwave theory and techniques  
DOI
10.1109/TMTT.2019.2936558
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Broadband

  • cascode

  • D-band (110-170GHz)

  • G-band (140-220GHz)

  • gallium nitride (GaN)

  • high electron mobility transistor (HEMT)

  • milimeter wave radar

  • monolithic microwave integrated circuit (MMIC)

  • power amplifier (PA)

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