Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers
Abstract
The simulation of spectral stabilization of broad-area edgeemitting semiconductor diode lasers is presented in this paper. In the reported model light-, temperature- and charge carrier-distributions are solved iteratively in frequency domain for transverse slices along the semiconductor heterostructure using wide-angle finite-difference beam propagation. Depending on the operating current the laser characteristics are evaluated numerically, including near- and far-field patterns of the astigmatic laser beam, optical output power and the emission spectra, with central wavelength and spectral width. The focus of the model lies on the prediction of influences on the spectrum and power characteristics by frequency selective feedback from external optical resonators. Results for the free running and the spectrally stabilized diode are presented.
