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  4. A metamorphic HEMT S-MMIC amplifier with 16.1 dB gain at 460 GHz
 
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2010
Conference Paper
Title

A metamorphic HEMT S-MMIC amplifier with 16.1 dB gain at 460 GHz

Abstract
In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to 465 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with a very compact design resulted in a die size of only 0.37 × 0.63 mm2.
Author(s)
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lösch, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010  
Conference
Compound Semiconductor Integrated Circuit Symposium (CSICS) 2010  
DOI
10.1109/CSICS.2010.5619608
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • grounded coplanar waveguide

  • low-noise amplifier (LNA)

  • submillimeter-wave monolithic integrated circuit

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