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  4. Heteroepitaxial diamond growth on (100) silicon
 
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1993
Journal Article
Title

Heteroepitaxial diamond growth on (100) silicon

Abstract
Highly oriented diamond films have been deposited on mirror-polished single crystalline (100) silicon by microwave plasma CVD. The crystallites are grown with their (001) planes parallel to the silicon (001) plane and their (110) directions parallel to silicon (110), as is shown by scanning electron microscopy (SEM) and x-ray diffraction analysis.
Author(s)
Jiang, X.
Klages, C.-P.
Journal
Diamond and Related Materials  
Conference
Diamond Films 1992  
DOI
10.1016/0925-9635(93)90282-7
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Keyword(s)
  • 100 Silicium

  • 100 silicon

  • Diamant

  • diamond

  • Heteroepitaxie

  • heteroepitaxy

  • hydrogen

  • Methan

  • methane

  • microwave plasma CVD

  • Mikrowellen-Plasma-CVD

  • Wasserstoff

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