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  4. Heteroepitaxial diamond growth on (100) silicon
 
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1993
Journal Article
Titel

Heteroepitaxial diamond growth on (100) silicon

Abstract
Highly oriented diamond films have been deposited on mirror-polished single crystalline (100) silicon by microwave plasma CVD. The crystallites are grown with their (001) planes parallel to the silicon (001) plane and their (110) directions parallel to silicon (110), as is shown by scanning electron microscopy (SEM) and x-ray diffraction analysis.
Author(s)
Jiang, X.
Klages, C.-P.
Zeitschrift
Diamond and Related Materials
Konferenz
Diamond Films 1992
Thumbnail Image
DOI
10.1016/0925-9635(93)90282-7
Language
English
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Fraunhofer-Institut für Schicht- und Oberflächentechnik IST
Tags
  • 100 Silicium

  • 100 silicon

  • Diamant

  • diamond

  • Heteroepitaxie

  • heteroepitaxy

  • hydrogen

  • Methan

  • methane

  • microwave plasma CVD

  • Mikrowellen-Plasma-CVD

  • Wasserstoff

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